PART |
Description |
Maker |
1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35 0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34 0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35 0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34 0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
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1N4948-E3-PKG4 |
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AP, LEAD FREE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
Vishay Semiconductors
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
MUR160 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 2000 V, SILICON, SIGNAL DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE
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SB01-05Q SB01-05Q-E |
0.1 A, 50 V, SILICON, SIGNAL DIODE 50V, 100mA Rectifier Shottky Barrier Diode Small signal(single type) DIODE SCHOTTKY 50V 0.1A 3MCP
|
Sanyo Semiconductor SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
1N914BWS 1N4148WS |
Small Signal Diode; Package: SOD-323F; No of Pins: 2; Container: Tape & Reel 0.15 A, 100 V, SILICON, SIGNAL DIODE Small Signal Diodes
|
Fairchild Semiconductor, Corp.
|
1N6662US 1N6663US 1N6661US JAN1N6662US JANTXV1N666 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 400; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35 Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 225; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation Microsemi, Corp.
|
GP10YHE3/73 GP10YHE3/54 GP10W-E3/54 GP10VHE3/73 |
1 A, 1600 V, SILICON, SIGNAL DIODE, DO-204AL ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN 1 A, 1500 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 1400 V, SILICON, SIGNAL DIODE, DO-204AL
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Vishay Beyschlag VISHAY SEMICONDUCTORS
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